Title: Field-effect chirality devices with Dirac semimetal Show Chinese title

Title: 具有狄拉克半金属的场效应手性器件

Abstract: Charge-based field-effect transistors (FETs) greatly suffer from unavoidable carrier scattering and heat dissipation. In analogy to valley degree of freedom in semiconductors, chiral anomaly current in Weyl/Dirac semimetals is theoretically predicted to be nearly non-dissipative over long distances, but still lacks experimental ways to efficiently control its transport. Here we demonstrate field-effect chirality devices with Dirac semimetal PtSe2, in which its Fermi level is close to the Dirac point in conduction band owing to intrinsic defects. The chiral anomaly is further corroborated with nonlocal valley transport measurement, which can also be effectively modulated by external fields, showing robust nonlocal valley transport with micrometer diffusion length. Similar to charge-based FETs, the chiral conductivity in PtSe2 devices can be modulated by electrostatic gating with an ON/OFF ratio more than 103. We also demonstrate basic logic functions in the devices with electric and magnetic fields as input signals. Show Chinese abstract

Abstract: 基于电荷的场效应晶体管(FETs)严重受到不可避免的载流子散射和散热的影响。 类似于半导体中的谷自由度，Weyl/Dirac半金属中的手性异常电流理论上被预测在长距离上几乎无耗散，但仍缺乏有效控制其传输的实验方法。 在这里，我们展示了基于狄拉克半金属PtSe2的手性场效应器件，由于本征缺陷，其费米能级接近导带中的狄拉克点。 通过非局部谷输运测量进一步验证了手性异常，该测量也可以被外加场有效调制，显示出具有微米扩散长度的鲁棒非局部谷输运。 类似于基于电荷的FETs，PtSe2器件中的手性电导可以通过静电栅极调控，开/关比超过103。 我们还演示了以电场和磁场作为输入信号的器件基本逻辑功能。