Title: Enhancing Radiation Hardness and Granularity in HV-CMOS: The RD50-MPW4 Sensor Show Chinese title

Title: 提高高压CMOS的辐射硬度和粒度：RD50-MPW4传感器

Abstract: The latest HV-CMOS pixel sensor developed by the former CERN-RD50-CMOS group, known as the \mpw, demonstrates competitive radiation tolerance, spatial granularity, and timing resolution -- key requirements for future high-energy physics experiments such as the HL-LHC and FCC. Fabricated using a \SI{150}{nm} CMOS process by \emph{LFoundry}, it introduces several improvements over its predecessor, the \emph{RD50-MPW3}, including separated power domains for reduced noise, a new backside biasing scheme, and an enhanced guard ring structure, enabling operation at bias voltages up to \SI{800}{V}. Tests with non-irradiated samples achieved hit detection efficiencies exceeding \SI{99.9}{\%} and a spatial resolution around \SI{16}{\mu m}. Neutron-irradiated sensors were characterized using IV measurements and test-beam campaigns, confirming the sensor's robustness in high-radiation environments. The results highlight the ability of HV-CMOS technology to restore hit detection efficiency post-irradiation by increasing the applied bias voltage. Details of these measurements and timing performance are presented in this paper. Show Chinese abstract

Abstract: 前 CERN-RD50-CMOS 小组开发的最新款高压 CMOS 像素传感器，被称为 \mpw ，展示了具有竞争力的抗辐射能力、空间分辨率和时间分辨率——这是未来高能物理实验（如 HL-LHC 和 FCC）的关键要求。 该传感器由 \emph{LFoundry} 使用 \SI{150}{nm} CMOS 工艺制造，在其前身 \emph{RD50-MPW3} 的基础上进行了多项改进，包括引入分离的电源域以降低噪声、新的背照射偏置方案以及增强的保护环结构，使其能够在高达 \SI{800}{V} 的偏置电压下运行。 对未辐照样品的测试显示，其命中检测效率超过了 \SI{99.9}{\%} ，空间分辨率达到约 \SI{16}{\mu m}。 使用中子辐照的传感器通过 IV 测量和束流测试活动进行了表征，证实了其在高辐射环境中的稳健性。 结果显示，高压 CMOS 技术能够通过增加施加的偏置电压来恢复辐照后的命中检测效率。 本文介绍了这些测量的详细信息及其时间性能。