Title: Atomic-Scale Insights into the Switching Mechanisms of RRAM Devices Show Chinese title

Title: 原子尺度下对RRAM器件切换机制的洞察

Abstract: The growing energy demands of information and communication technologies, driven by data-intensive computing and the von Neumann bottleneck, underscore the need for energy-efficient alternatives. Resistive random-access memory (RRAM) devices have emerged as promising candidates for beyond von Neumann computing paradigms, such as neuromorphic computing, offering voltage-history-dependent switching that mimics synaptic and neural behaviors. Atomic-scale mechanisms, such as defect-driven filament formation and ionic transport, govern these switching processes. In this work, we present a comprehensive characterization of Tantalum Oxide based RRAM devices featuring both oxygen-rich and oxygen-deficient switching layers. We analyze the dominant conduction mechanisms underpinning resistive switching and systematically evaluate how oxygen stoichiometry influences device behavior. Leveraging a bottom-up design methodology, we link material composition to electrical performance metrics-such as endurance, cycle-to-cycle variability, and multilevel resistance states-providing actionable guidelines for optimizing RRAM architectures for energy-efficient memory and computing applications. Show Chinese abstract

Abstract: 随着信息和通信技术日益增长的能源需求，由数据密集型计算和冯·诺依曼瓶颈所驱动，凸显了对节能替代方案的迫切需求。电阻随机存取存储器(RRAM)器件已成为超越冯·诺依曼计算范式的有希望的候选者，例如神经形态计算，其电压历史依赖性切换能够模仿突触和神经行为。原子尺度机制，如缺陷驱动的导电丝形成和离子传输，控制这些切换过程。在本工作中，我们对基于氧化钽的RRAM器件进行了全面表征，这些器件具有富含氧和缺氧的切换层。我们分析了支撑电阻切换的主导传导机制，并系统评估了氧化学计量比如何影响器件行为。利用自下而上的设计方法，我们将材料组成与电气性能指标——如耐久性、循环间变异性和多级电阻状态——联系起来，为优化RRAM架构以用于节能存储和计算应用提供了可操作的指南。