标题： 半导体器件仿真器 SEMIDV：具有量子效应的紧凑型半导体器件模拟器 显示英文标题

标题： SEMIDV: A Compact Semiconductor Device Simulator with Quantum Effects

摘要： 本文介绍了一种紧凑型半导体器件模拟器 SEMIDV，它包含了量子效应。 SEMIDV 求解半导体器件的泊松-漂移-扩散方程，并提供了一个用户友好的 Python 接口用于脚本编写和数据分析。 引入局域化景观理论以对漂移-扩散方程进行量子修正。 该理论直接求解薛定谔方程的基态，无需进一步近似，提供了高效建模量子效应的方法。 此外，开发了一种考虑弹道输运的紧凑型迁移率模型，以捕捉短沟道器件中的迁移率对弹道长度的依赖性以及速度超射效应。 最后，使用 SEMIDV 对纳米片 FET 进行了研究。 分析了一种最先进的全包围栅/带状 FET 的电气特性（门长度为 6 nm），讨论了速度超射和量子限制对电流和电容的影响。 提出了一种超短沟道晶体管的设计，门长度低至 4.5 nm，Vdd = 0.45 V，以进一步推动集成电路技术的边界。 显示英文摘要

摘要： In this paper, I present SEMIDV - a compact semiconductor device simulator incorporating quantum effects. SEMIDV solves the Poisson-Drift-Diffusion equations for semiconductor devices and provides a user-friendly Python interface for scripting and data analysis. Localization landscape theory is introduced to provide quantum corrections to the Drift-Diffusion equation. This theory directly solves the ground state of the Schrodinger equation without further approximation, offering an efficient solution for quantum effect modeling. Additionally, a compact mobility model considering ballistic transport is developed to capture the ballistic length dependence of mobility and the velocity overshoot effect in short-channel devices. Finally, a study on a nanosheet FET using SEMIDV is conducted. I analyze the electrical characteristics of a state-of-the-art GAA/RibbonFET with a 6 nm gate length and discuss the effects of velocity overshoot and quantum confinement on currents and capacitances. A design for an ultra-short-channel transistor with a gate length down to 4.5 nm with a Vdd = 0.45 V is proposed to push the boundaries of integrated circuit technology further.