标题： 极化子准粒子图像用于半导体中相干声子的生成动力学：瞬态和非线性法诺共振 显示英文标题

标题： Polaronic-Quasiparticle Picture for Generation Dynamics of Coherent Phonons in Semiconductors: Transient and Non-Linear Fano Resonance

摘要： 我们基于极性和非极性半导体（如GaAs和Si）中的多极子准粒子（PQ）模型，研究相干声子（CPs）的生成动力学。 在所考虑的模型中，PQ算符由两种类型的算符组成。 一种是准玻色子算符——定义为一组电子算符对的线性组合——另一种是纵向光学（LO）声子算符。 特别是处理了瞬态和非线性法诺共振（FR）问题；这种量子干涉效应的痕迹仅在载流子被超短脉冲激光激发后立即在轻度$n$-掺杂的Si中被观察到 [M. Hase 等，Nature 426, 51 (2003)]，尽管在GaAs中尚未观察到。 结果表明，声子能量状态嵌入由准玻色子的一组绝热本征态形成的连续态中。 这一结果意味着在目前的光学非线性系统中可能出现瞬态FR。 显示英文摘要

摘要： We examine generation dynamics of coherent phonons (CPs) in both of polar and non-polar semiconductors -- such as GaAs and Si -- based on a polaronic-quasiparticle (PQ) model. In the model concerned, the PQ operator is composed of two kinds of operators. One is a quasiboson operator -- defined as a linear combination of a set of pairs of electron operators -- and the other is a longitudinal optical (LO) phonon operator. The problem of transient and non-linear Fano resonance (FR) is tackled in particular; the vestige of this quantum interference effect was observed exclusively in lightly $n$-doped Si immediately after carriers were excited by an ultrashort pulse-laser [M. Hase et. al., Nature 426, 51 (2003)], though not observed yet in GaAs. It is shown that the phonon energy state is embedded in a continuum state formed by a set of adiabatic eigenstates of the quasiboson. This result implies the possibility of manifestation of the transient FR in the present optically-non-linear system.