标题： 用于硅中室温增益的第四族双异质结构发光二极管 显示英文标题

标题： A group-IV double heterostructure light emitting diode for room temperature gain in Silicon

摘要： 在硅上实现有用的电信激光器的直接外延集成仍然阻碍了光学互连技术在芯片级的应用。 晶体硅本身是一种间接半导体，是不良的发光体。 在这里，我们概念上简单地识别出具有大Ge含量（$x \gtrsim 0.4$）的Si/Si$_{1-x}$Ge$_x$/Si双异质结构（DHS）作为适用于基于硅的集成光学的有希望的增益材料。 特别是，通过自洽的泊松-电流输运计算，我们表明含有16 nm厚的高结晶质量的Si$_{1-x}$Ge$_x$层的Si二极管，该层位于p-n结中心，在正向驱动时会导致DHS中的载流子有效积累并产生增益。 尽管存在高应变，我们明确地证明，这种以前无法实现的无缺陷DHS可以通过在原始生长压力下的超低温外延技术进行制造。 电信波长的发光持续到360 K，并且与少数载流子注入的约160 meV高的导带势垒直接相关。 这种外延方法允许进一步增加DHS中的Ge含量，并创建点-阱异质结构，预测其可以获得更高的增益。 因此，这里提出的出人意料的简便DHS可以是迈向新型第四族光电设备的重要步骤，这些设备适用于硅光子学。 显示英文摘要

摘要： The lack of straightforward epitaxial integration of useful telecom lasers on silicon remains the major bottleneck for bringing optical interconnect technology down to the on-chip level. Crystalline silicon itself, an indirect semiconductor, is a poor light emitter. Here, we identify conceptionally simple Si/Si$_{1-x}$Ge$_x$/Si double heterostructures (DHS) with large Ge content ($x \gtrsim 0.4$) as auspicious gain material suitable for Si-based integrated optics. In particular, using self-consistent Poisson-current transport calculations, we show that Si diodes containing a 16 nm thick Si$_{1-x}$Ge$_x$ layer of high crystalline quality, centered at the p-n junction, results in efficient carrier accumulation in the DHS and gain if the diode is driven in forward direction. Despite the high strain, we unambiguously demonstrate that such prior unattainable defect-free DHS can be fabricated using ultra-low temperature epitaxy at pristine growth pressures. Telecom light emission is persistent up to 360 K, and directly linked to a ~160 meV high conduction band barrier for minority electron injection. This epitaxy approach allows further increasing the Ge content in the DHS and creating dot-in-well heterostructures for which even higher gains are predicted. Thus, the surprisingly facile DHS presented here can be an essential step toward novel classes of group-IV optoelectronic devices for silicon photonics.