标题： 磁补偿的纳米厚度镓掺杂钇铁石榴石（Ga:YIG）薄膜，具有强垂直磁各向异性 显示英文标题

标题： Magnetically Compensated Nanometer-thin Ga-Substituted Yttrium Iron Garnet (Ga:YIG) Films with Robust Perpendicular Magnetic Anisotropy

摘要： 具有垂直磁各向异性（PMA）的磁性完全或部分补偿的绝缘铁磁体为基本自旋波物理和高速磁子应用提供了有价值的见解。 本研究报道了饱和磁化强度4PiMs低于200 G的纳米级镓取代钇铁石榴石（Ga:YIG）薄膜的关键磁参数。 振动样品磁强计（VSM）用于确定剩余磁化强度4PiMr以及磁易轴的极性取向，适用于净磁矩非常低的样品。 此外，研究了磁性补偿的Ga:YIG薄膜的净磁化强度随温度的变化，其补偿点Tcomp接近室温。 对于室温下剩余磁化强度值低于60 G的薄膜，确定了补偿点Tcomp，并将其与居里温度TC相关联。 在6.5 GHz下进行的铁磁共振（FMR）测量显示，FMR线宽Delta H FWHM与剩余磁化强度成反比关系。 Ga:YIG薄膜中饱和磁化强度的降低导致有效磁化强度4PiMeff显著增加，从而实现了具有强PMA的薄膜。 这为在常用的GGG衬底上对潜在磁子自旋波器件进行精细调节开辟了一个新的参数空间。 显示英文摘要

摘要： Magnetically full or partially compensated insulating ferrimagnets with perpendicular magnetic anisotropy (PMA) offer valuable insights into fundamental spin-wave physics and high-speed magnonic applications. This study reports on key magnetic parameters of nanometer-thin Ga substituted yttrium iron garnet (Ga:YIG) films with saturation magnetization 4PiMs below 200 G. Vibrating sample magnetometry (VSM) is used to determine the remanent magnetization 4PiMr and the polar orientation of the magnetic easy axis in samples with very low net magnetic moments. Additionally, the temperature dependence of the net magnetization of magnetically compensated Ga:YIG films, with compensation points Tcomp near room temperature is investigated. For films with remanent magnetization values below 60 G at room temperature, the compensation points Tcomp are determined and correlated with their Curie temperatures TC. Ferromagnetic resonance (FMR) measurements at 6.5 GHz show that the FMR linewidths Delta H FWHM correlate inversely proportional with the remanent magnetization. The reduced saturation magnetization in the Ga:YIG films leads to a significant increase in the effective magnetization 4PiMeff and thus enables films with robust PMA. This opens up a new parameter space for the fine-tuning of potential magnonic spin-wave devices on commonly used GGG substrates.