标题： 单层WSe2在扫描隧道显微镜中的光学带结构工程 显示英文标题

标题： Optical Band Engineering of Monolayer WSe2 in a Scanning Tunneling Microscope

摘要： 强烈的电磁场可能导致固体的电子性质发生显著变化。 这些变化通常通过光学探测器对修改后的电子结构进行研究。 在这里，我们使用配备近场连续波（CW）激光激发的光学扫描隧道显微镜（光学-STM），直接测量单层过渡金属二硫化物（TMD）半导体WSe2中光致电子态的电子结构。 我们发现，当施加的电磁场与半导体的带隙共振时，有效隧穿间隙和隧穿态密度受到电磁场强度的强烈影响。 我们的研究结果表明，当连续波激光激发被强烈限制在纳米尺度时，可以用来生成量子材料的光致电子态。 显示英文摘要

摘要： Intense electromagnetic fields can result in dramatic changes in the electronic properties of solids. These changes are commonly studied using optical probes of the modified electronic structure. Here we use optical-scanning tunneling microscopy (optical-STM) equipped with near-field continuous wave (CW) laser excitation to directly measure the electronic structure of light-dressed states in a monolayer transition metal dichalcogenide (TMD) semiconductor, WSe2. We find that the effective tunneling gap and tunneling density of states are strongly influenced by the intensity of the electromagnetic field when the applied field is resonant with the bandgap of the semiconductor. Our findings indicate that CW laser excitation can be used to generate light-dressed electronic states of quantum materials when confined strongly to the nanoscale.