标题： 三重工程化多模态晶体管在二维双层半导体横向异质结构中 显示英文标题

标题： Trion Engineered Multimodal Transistors in Two dimensional Bilayer Semiconductor Lateral Heterostructures

摘要： 多模态器件操作对于推动二维半导体在电子、光子、信息和量子技术中的集成至关重要。 对载流子动力学的精确控制，特别是激子的产生和传输，在微调基于二维半导体异质结构的光电器件功能方面至关重要。 然而，二维半导体中的传统激子工程方法主要局限于通过电或应变诱导限制的人工组装垂直pn异质结构。 在本研究中，我们利用了具有固有空间分离能带结构的双层二维横向npn多结异质结构，以实现无需外部限制的优先激子产生和操控。 在横向npn FET几何结构中，我们揭示了独特的非平凡特性，包括通道光响应从正到负的动态调节。 通过仔细调整电偏置和入射光子能量，实现了这些二维FET的多模态操作，从而能够精确控制三重态的产生和传输。 低温光致发光测量揭示了双层MoSe2中存在三重态以及WSe2中的本征陷阱态。 不同FET器件几何结构的测量表明，二维横向异质结构光电晶体管具有多功能性，可用于高效调节和电气操控激子特性。 我们的发现为开发实用的激子基晶体管、传感器、多模态光电和量子技术铺平了道路。 显示英文摘要

摘要： Multimodal device operations are essential to advancing the integration of 2D semiconductors in electronics, photonics, information and quantum technology. Precise control over carrier dynamics, particularly exciton generation and transport, is crucial for finetuning the functionality of optoelectronic devices based on 2D semiconductor heterostructure. However, the traditional exciton engineering methods in 2D semiconductors are mainly restricted to the artificially assembled vertical pn heterostructures with electrical or strain induced confinements. In this study, we utilized bilayer 2D lateral npn multijunction heterostructures with intrinsically spatially separated energy landscapes to achieve preferential exciton generation and manipulation without external confinement. In lateral npn FET geometry, we uncover unique and nontrivial properties, including dynamic tuning of channel photoresponsivity from positive to negative. The multimodal operation of these 2D FETs is achieved by carefully adjusting electrical bias and the impinging photon energy, enabling precise control over the trions generation and transport. Cryogenic photoluminescence measurement revealed the presence of trions in bilayer MoSe2 and intrinsic trap states in WSe2. Measurements in different FET device geometries show the multifunctionality of 2D lateral heterostructure phototransistors for efficient tuning and electrical manipulation of excitonic characteristics. Our findings pave the way for developing practical exciton-based transistors, sensors, multimodal optoelectronic and quantum technologies