标题： 铁磁阻尼与自旋-轨道到电荷转换之间的反相关性取决于盖层 显示英文标题

标题： Capping layer dependent anti-correlation between magnetic damping and spin-orbital to charge conversion

摘要： Gilbert阻尼和自旋-轨道到电荷的转换现象在控制现代自旋电子器件性能方面起着至关重要的作用。尽管铁磁材料（FMs）和重金属（HMs）被认为是未来基于自旋轨道转矩磁随机存储器（SOT-MRAM）器件的关键组成部分，但最近在自旋电子器件中集成轻质材料以及低本征自旋轨道耦合（SOC）的现象已被证明是值得注意的。在这里，我们展示了当用低自旋轨道耦合的有机和无机层覆盖时，$\beta$-W/CoFeB双层膜中磁化动力学的有效调控。与CuO$_x$相比，在$\beta$-W/CoFeB/CL异质结构中，C$_{60}$覆盖层（CL）显著增强了磁化弛豫过程，而不论覆盖层的性质如何，静态磁性属性保持不变。 有趣的是，发现自旋-轨道到电荷的转换现象在$\beta$-W/CoFeB/CuO$_x$堆叠结构中比在$\beta$-W/CoFeB/C$_{60}$异质结构中的增强，这表明磁阻尼和自旋-轨道到电荷转换之间存在反相关性。 结果通过界面现象（如轨道Rashba效应、双声子散射和界面自旋记忆损失）进行了解释。 我们详细的研究工作揭示了低自旋轨道耦合材料在有效调节磁化动力学以开发未来高效功率自旋电子器件中的重要性。 显示英文摘要

摘要： The magnetic Gilbert damping and spin-orbital to charge interconversion phenomenon play vital role in controlling the modern spintronics device performances. Though the ferromagnets (FMs) and heavy metals (HMs) are considered to be the key components of the future spin-orbit torque magnetic random access memory (SOT-MRAM) devices, recently the integration of lighter materials with low intrinsic spin-orbit coupling (SOC) in spintronics devices has proven to be noteworthy. Here we demonstrate the efficient control of magnetization dynamics of $\beta$-W/CoFeB bilayer when capped by low SOC organic and inorganic layers. The C$_{60}$ capping layer (CL) significantly enhances the magnetization relaxation process compared to the CuO$_x$ in $\beta$-W/CoFeB/CL heterostructures, while the static magnetic properties remain in-different irrespective of the nature of CL. Interestingly, the spin-orbital to charge conversion phenomenon is found to be enhanced for $\beta$-W/CoFeB/CuO$_x$ stacking compared to the $\beta$-W/CoFeB/C$_{60}$ heterostructure, signifying the anti-correlation between the magnetic damping and spin-orbital to charge conversion. The results are interpreted by the interfacial phenomena, like the orbital Rashba effect, two-magnon scattering, and interfacial spin memory loss. Our detailed experimental investigations shed light on the importance of low SOC materials in effectively tuning the magnetization dynamics for the development of future power efficient spintronics devices.