标题： 通过电荷噪声抑制增强GaAs量子点的不可区分光子发射 显示英文标题

标题： Enhancement of Indistinguishable Photon Emission from a GaAs Quantum Dot via Charge Noise Suppression

摘要： 不可区分单光子的生成是未来量子技术的基本要求，特别是在量子中继网络和基于纠缠分发的分布式量子计算中。 然而，光谱抖动通常由外延量子点中的电荷噪声引起，导致激子退相干，从而限制了它们在量子应用中的实际使用。 我们提出了一种简单的方法，以减轻嵌入在n-i-p二极管结构中的滴蚀GaAs量子点中的电荷噪声引起的退相干，并将它们确定性地集成到一个电接触的圆形布拉格光栅谐振器中以增强发射。 该量子器件通过施加外部电场可以稳定电荷环境，同时产生约（37 ± 2）%的光子提取效率。 Hong-Ou-Mandel双光子干涉测量显示，激子退相干时间和干涉可见度对施加偏压具有显著的电压依赖性，与我们的理论预测高度一致。 值得注意的是，在正向方向下，随着二极管电流（I）的增加，从最大值（电荷稳定校正值为97%）处的可见度按反平方关系（与1/I²成比例）下降。 在准共振激发方案下，我们实现了约（6.8 ± 0.5）ns的最大激子退相干时间（T2*），在不需要复杂回波方案（如Ramsey或Carr-Purcell-Meiboom-Gill序列）的情况下几乎达到傅里叶极限（T2 = 2T1）。 这些发现与速率方程建模和量子光学分析以及电压相关的线宽测量结果一致，证明了对激子退相干的优化电气控制。 显示英文摘要

摘要： The generation of indistinguishable single photons is a fundamental requirement for future quantum technologies, particularly in quantum repeater networks and for distributed quantum computing based on entanglement distribution. However, spectral jitter, often induced by charge noise in epitaxial quantum dots, leads to exciton dephasing, thereby limiting their practical usage in quantum applications. We present a straightforward approach to mitigate charge noise-induced decoherence in droplet-etched GaAs quantum dots embedded in an n-i-p diode structure and integrated deterministically into an electrically contacted circular Bragg grating resonator for emission enhancement. The quantum device allows for the stabilization of the charge environment by applying an external electrical field while producing a photon extraction efficiency of approximately (37 +- 2)%. Hong-Ou-Mandel two-photon interference measurements reveal a strong voltage dependence of the exciton dephasing time and interference visibility on the applied bias in excellent agreement with our theoretical predictions. Notably, the reduction in visibility from a maximum, charge-stabilized corrected value of 97 percent at the optimum bias point follows an inverse square dependence (proportional to 1/I^2) with increasing diode current (I) in forward direction. Under a quasi-resonant excitation scheme, we achieve a maximum exciton dephasing time (T2*) of approximately (6.8 +-0.5) ns, reaching nearly the Fourier limit (T2 = 2T1) without the need for complex echo schemes like Ramsey or Carr-Purcell-Meiboom-Gill sequences. These findings are consistent with theoretical predictions from rate equation modeling and quantum optical analysis as well as voltage-dependent linewidth measurements, demonstrating optimized electrical control of exciton dephasing.