标题： 无序拓扑绝缘体中的局域霍尔电导率 显示英文标题

标题： Local Hall Conductivity in Disordered Topological Insulators

摘要： 我们推导了缺乏平移对称性的系统的局部霍尔电导率表达式，并利用它来研究磁绝缘体中无序区域周围的霍尔信号局部涨落。 我们发现，当引入非磁势无序时，系统处于陈绝缘体状态的参数空间范围会增加。 此外，通过将一个无序区域拆分为多个较小的区域，而保持总的无序量不变，可以增强拓扑安德森绝缘体存在的相空间。 我们预计我们的结果将激励下一代局部扫描和局部阻抗谱实验，以在无序拓扑绝缘体体内的区域周围可视化霍尔电流。 显示英文摘要

摘要： We derive the expression for the local Hall conductivity for systems that lack translation symmetry and use it to study the local fluctuations of the Hall signal around disordered patches in magnetic insulators. We find that the regime in parameter space over which the system is a Chern insulating state increases upon inclusion of non-magnetic potential disorder. In addition, the phase space over which the topological Anderson insulator exists can be enhanced by breaking up a single disordered patch into multiple smaller patches with the same total amount of disorder. We expect our results will motivate the next generation of local scanning and local impedance spectroscopy experiments to visualize Hall currents around patches in the bulk of a disordered topological insulator.