标题： 具有完全可调双点间耦合的硅基2x2量子点阵列 显示英文标题

标题： A 2x2 quantum dot array in silicon with fully tuneable pairwise interdot coupling

摘要： 半导体自旋量子比特的近期进展已经实现了超过十个量子比特的线性阵列。迈向二维（2D）量子比特阵列是实现容错实施的关键下一步，但这也带来了相当大的制造挑战，尤其是因为启用最近邻纠缠控制需要在量子点架构中的量子点之间引入间隙交换门。在这项工作中，我们展示了一个硅金属-氧化物-半导体（MOS）量子点的二维阵列，并且所有相邻量子点之间的耦合都是可调的。该设备在4.2K下进行了表征，在此温度下，我们展示了双量子点和三量子点配置的形成与隔离。我们通过间隙交换门展示了跨越多达30个数量级/伏特的所有最近邻隧穿耦合的控制，并使用先进的建模工具估计了在这种架构中量子比特之间可能实现的交换相互作用。这些结果代表了朝着开发与晶圆厂制造技术兼容的二维MOS量子处理器迈出了重要一步。 显示英文摘要

摘要： Recent advances in semiconductor spin qubits have achieved linear arrays exceeding ten qubits. Moving to two-dimensional (2D) qubit arrays is a critical next step to advance towards fault-tolerant implementations, but it poses substantial fabrication challenges, particularly because enabling control of nearest-neighbor entanglement requires the incorporation of interstitial exchange gates between quantum dots in the qubit architecture. In this work, we present a 2D array of silicon metal-oxide-semiconductor (MOS) quantum dots with tunable interdot coupling between all adjacent dots. The device is characterized at 4.2 K, where we demonstrate the formation and isolation of double-dot and triple-dot configurations. We show control of all nearest-neighbor tunnel couplings spanning up to 30 decades per volt through the interstitial exchange gates and use advanced modeling tools to estimate the exchange interactions that could be realized among qubits in this architecture. These results represent a significant step towards the development of 2D MOS quantum processors compatible with foundry manufacturing techniques.