标题： 由自组装分子单层掺杂的GaAs 显示英文标题

标题： GaAs doped by self-assembled molecular monolayers

摘要： 自组装分子单层掺杂因其具有共形、无损和自限性的特点，仍然是研究的重点。 在此，我们展示了一种通过(NH4)2Sx溶液促进的GaAs硫单层掺杂。 范德堡技术、二次离子质谱和低温霍尔效应测量表明，硫掺杂剂的浓度和电子激活率分别为4×10^20 cm-3和77.6%。 硫掺杂GaAs的施主能级位于导带以下68 meV。 基于此工艺，在高掺杂的p型GaAs衬底上成功制备了p-n结。 显示英文摘要

摘要： Self-assembled molecular monolayer doping remains as a research focus for its nature of being conformal, nondestructive, and self-limiting. Herein, we demonstrate a sulfur monolayer doping in GaAs, facilitated by (NH4)2Sx solution. The Van der Pauw technique, secondary-ion mass spectroscopy, and low-temperature Hall effect measurements show that the sulfur dopants concentration and electron activation rate are 4*10^20 cm-3 and 77.6%, respectively. The donor energy level of sulfur-doped GaAs is located 68 meV below the conduction band. Based on this process, a p-n junction was successfully fabricated on highly doped p-type GaAs substrate.