标题： 通过异质共掺杂铁电HfO$_2$薄膜增强FeFET栅堆叠性能 显示英文标题

标题： Enhanced Performance of FeFET Gate Stack via Heterogeneously co-doped Ferroelectric HfO$_2$ Films

摘要： 在本工作中，我们探讨了在HfO$_2$薄膜中空间控制的Zr和Al异质共掺杂对铁电场效应晶体管（FeFETs）的金属-铁电-绝缘体-半导体（MFIS）栅极堆栈的影响。 通过在原子层沉积过程中精确调节Zr和Al掺杂剂的垂直排列，我们引入了有意的成分梯度，影响后续退火过程中的结晶动力学。 这种策略使我们能够系统地调节铁电层中的相变和畴成核，直接影响器件的可靠性和性能。 从结构角度看，我们的研究结果表明，MFIS堆栈中退火后的HfO$_2$薄膜的相组成主要由掺杂剂的空间排列决定。 从电学角度看，我们通过异质共掺杂观察到栅极堆栈的剩余极化和耐久性显著增强，这取决于掺杂剂的空间排列。 显示英文摘要

摘要： In this work, we explore the impact of spatially controlled Zr and Al heterogeneous co-doping in HfO$_2$ thin films tailored for metal-ferroelectric-insulator-semiconductor (MFIS) gate stacks of ferroelectric field effect transistors (FeFETs). By precisely modulating the vertical arrangement of Zr and Al dopants during atomic layer deposition, we introduce deliberate compositional gradients that affect crystallization dynamics during subsequent annealing. This strategy enables us to systematically tune the phase evolution and domain nucleation within the ferroelectric layer, directly influencing device reliability and performance. From a structural perspective, our findings demonstrate that the phase composition of annealed HfO$_2$ films in MFIS stacks is primarily determined by the spatial arrangement of dopants. From an electrical perspective, we observe significant enhancement of remanent polarization and endurance of the gate stacks through heterogeneous co-doping, depending on the spatial arrangement of dopants.