标题： 利用交变磁体实现非常规隧道磁阻缩放 显示英文标题

标题： Unconventional tunnel magnetoresistance scaling with altermagnets

摘要： 在常规的磁隧道结（MTJ）中，隧穿磁电阻（TMR）通常随着势垒厚度的增加而增大，因为电子在反平行构型中的传输衰减比在平行构型中的更快。 在这项工作中，我们揭示了在交替磁隧道结（AMTJ）中的一种异常尺度效应，其中TMR在势垒厚度增加时异常减小。 这种异常尺度效应起源于自旋分裂分支的重叠形成了一条在反平行状态下无法被抑制的传输路径。 这种现象通过双势垒模型来解释，并且进一步使用二维V2Te2O/Cr2Se2O/V2Te2O基AMTJ中的从头算量子输运模拟得到验证，在这些模拟中，当Cr2Se2O的层数从1增加到5时，TMR异常地从220%下降到40%。 我们的工作识别出AMTJ的一种特殊的意外输运特性，为AMTJ器件设计提供了基本限制，并展示了在超薄单层极限下AMTJ的潜在最优设计。 显示英文摘要

摘要： In conventional magnetic tunnel junctions (MTJs), the tunnel magnetoresistance (TMR) typically increases with barrier thickness as electron transmission in the antiparallel configuration decays faster than that of the parallel configuration. In this work, we reveal an anomalous scaling effect in altermagnetic tunnel junctions (AMTJs), where the TMR decreases anomalously with an increasing barrier thickness. The anomalous scaling originates from the overlapping spin-split branches form a transmission path that cannot be suppressed in the antiparallel state. Such phenomena is explained by adouble-barrier model and is further demonstrated using ab initio quantum transport simulations in 2D V2Te2O/Cr2Se2O/V2Te2O-based AMTJ, where the TMR anomalously decreases from 220% to 40% as the layer number of Cr2Se2O increases from 1 to 5. Our work identifies a peculiar unexpected transport characteristic of AMTJ, providing a fundamental limit on AMTJ device design and illustrating the potential optimal design of AMTJ at the ultrascaled monolayer limit.