标题： 通过空位诱导的局域模式在拓扑绝缘体中设计原子级电阻电路 显示英文标题

标题： Designing atomic-scale resistive circuits in topological insulators through vacancy-induced localized modes

摘要： 我们证明空位可以在拓扑绝缘体的体内诱导出拓扑保护的局域电子激发，当空位足够接近时，会引发一维传播的螺旋体模式。 我们表明这些模式的动力学可以由紧束缚哈密顿量有效描述，跃迁参数由相邻空位之间的电子波函数重叠决定，准确预测了低能谱。 基于这一现象，我们提出拓扑材料中的空位可用于设计原子尺度的电阻电路，并根据空位分布的几何特性估算相关电阻。 显示英文摘要

摘要： We demonstrate that vacancies can induce topologically protected localized electronic excitations within the bulk of a topological insulator, and when sufficiently close, give rise to one-dimensional propagating chiral bulk modes. We show that the dynamics of these modes can be effectively described by a tight-binding Hamiltonian, with the hopping parameter determined by the overlap of electronic wave functions between adjacent vacancies, accurately predicting the low-energy spectrum. Building on this phenomenon, we propose that vacancies in topological materials can be utilized to design atomic-scale resistive circuits, and estimate the associated resistance as a function of the vacancy distribution's geometric properties.