标题： 基于纳米粗糙度的硅界面极性依赖电粘附 显示英文标题

标题： Polarity-dependent Electroadhesion at Silicon Interfaces with Nanoscale Roughness

摘要： 我们测量并建模了具有纳米级粗糙度的多峰硅界面之间的电粘附。当施加电偏置时，我们自然氧化的硅界面显示出与弗朗克-诺德海姆模型一致的漏电流，并且电粘附可以通过边界元接触模型成功捕捉。我们表明，只有在对单晶硅片基底施加正向偏置时，多晶硅才会表现出电粘附，我们认为这是由于多晶硅中空穴相对于电子的迁移率降低所致。总体而言，我们的研究结果表明，静电相互作用可以显著增强刚性和平滑表面之间的粘附力和摩擦力，这在精密定位应用中可能非常重要。 显示英文摘要

摘要： We measure and model electroadhesion across multi-asperity silicon interfaces with nanometer scale roughness. When electrically biased, our naturally oxidized silicon interfaces display a leakage current consistent with the Fowler-Nordheim model and electroadhesion that can be successfully captured using a boundary element contact model. We show that polysilicon exhibits electroadhesion only under positive bias applied to the substrate monocrystalline wafer, which we interpret as a result of the reduced mobility of holes, with respect to electrons, within polysilicon. Overall, our findings reveal that electrostatic interactions can significantly enhance adhesion and friction between stiff and smooth surfaces, which can be important for example in precision positioning applications.