标题： 强关联二维电子系统中低载流子密度绝缘态与量子霍尔绝缘态的非等价性 显示英文标题

标题： Inequivalence of the low-density insulating state and quantum Hall insulating states in a strongly correlated two-dimensional electron system

摘要： 我们发现，在超洁净的硅锗/硅/硅锗量子阱中进入低密度绝缘态和整数量子霍尔绝缘态时，电压-电流特性的行为在定性上是不同的。 代表低密度下电子固体形成的双阈值电压-电流曲线在量子霍尔态下未被观察到，这并不证实准粒子量子霍尔Wigner固体的存在，并表明接近整数填充时的准粒子不会形成一个独立的子系统。 显示英文摘要

摘要： We find that the behaviors of the voltage-current characteristics as one enters the low-density insulating state and integer quantum Hall insulating states in the ultra-clean two-dimensional electron system in SiGe/Si/SiGe quantum wells are qualitatively different. The double-threshold voltage-current curves, representative of electron solid formation at low densities, are not observed in the quantum Hall regime, which does not confirm the existence of a quasi-particle quantum Hall Wigner solid and indicates that quasi-particles near integer filling do not form an independent subsystem.