标题： 基于WTe$_{2}$的约瑟夫森结中的边缘依赖约瑟夫森二极管效应 显示英文标题

标题： Edge dependent Josephson Diode effect in WTe$_{2}$-Based Josephson junction

摘要： 约瑟夫森二极管效应（JDE），一种非互易超电流，是未来无耗散电子技术的基石，然而在简单的器件结构中实现高效率仍然是一个重大挑战。 在这里，我们理论研究了基于单层 1T'-WTe$_2$的结中的 JDE。 我们首先确定 WTe$_2$纳米带的不同边缘终止会导致多样的电子能带结构，其中一些结构即使在晶体学等效的终止下也具有不对称的边缘态。 这种内在的不对称性为实现 JDE 提供了一个自然平台。 通过基于 WTe$_2$的约瑟夫森结，我们展示了当磁通量破坏时间反演对称性时，纯粹由这些不对称边缘产生的显著 JDE。 虽然这种由边缘态驱动的 JDE 效率本身受到限制，但我们发现了一个关键机制来增强它：通过将化学势调入体带，边缘和体输运通道之间的相互作用使最大二极管效率提高了超过$50\%$。 此外，我们表明这种增强的 JDE 对中等程度的边缘无序具有鲁棒性。 我们的发现不仅提出了一种利用内在材料特性实现高效 JDE 的新途径，还突显了工程化 WTe$_2$系统在开发先进超导量子器件方面的潜力。 显示英文摘要

摘要： The Josephson diode effect (JDE), a nonreciprocal supercurrent, is a cornerstone for future dissipationless electronics, yet achieving high efficiency in a simple device architecture remains a significant challenge. Here, we theoretically investigate the JDE in a junction based on monolayer 1T'-WTe$_2$. We first establish that different edge terminations of a WTe$_2$ nanoribbon lead to diverse electronic band structures, some of which host asymmetric edge states even with crystallographically equivalent terminations. This intrinsic asymmetry provides a natural platform for realizing the JDE. With a WTe$_2$-based Josephson junction, we demonstrate a significant JDE arising purely from these asymmetric edges when time-reversal symmetry is broken by a magnetic flux. While the efficiency of this edge-state-driven JDE is inherently limited, we discover a crucial mechanism for its enhancement: by tuning the chemical potential into the bulk bands, the interplay between edge and bulk transport channels boosts the maximum diode efficiency more than $50\%$. Furthermore, we show that this enhanced JDE is robust against moderate edge disorder. Our findings not only propose a novel route to achieve a highly efficient JDE using intrinsic material properties but also highlight the potential of engineered WTe$_2$ systems for developing advanced superconducting quantum devices.