标题： 反铁磁RGaGe（R = Nd, Gd）单晶中的异常霍尔效应 显示英文标题

标题： Anomalous Hall effect in antiferromagnetic RGaGe (R = Nd, Gd) single crystals

摘要： 近期，非中心对称的外尔半金属候选材料家族RTX（R =稀土元素，T =贫金属，X = Si和Ge）因其奇异的量子态以及在量子器件中的潜在应用吸引了广泛关注。 本研究中，我们对高质量NdGaGe和GdGaGe单晶进行了全面的研究，揭示了它们不同的磁性和电学响应。 这两种化合物分别在NdGaGe和GdGaGe中表现出TN为7.6 K和22.4 K的反铁磁转变。 NdGaGe显示出强烈的磁各向异性（\c{hi}c /\c{hi}a - 70）。 相比之下，GdGaGe则表现出弱磁各向异性行为（\c{hi}c /\c{hi}a - 1），并具有显著的自旋翻转跃迁现象。 在TN以下，由于磁场诱导的自旋排列减少了自旋无序散射，NdGaGe表现出显著的负磁阻效应。 GdGaGe表现出更为复杂的磁阻效应：在低场下呈现正值，过渡到低温下的负值，这归因于自旋翻转散射的减少。 特别地， NdGaGe表现出大约368{\Omega }-1 cm-1的大异常霍尔电导率（AHC），主要由内在机制主导。 这些结果揭示了稀土元素在调节RGaGe体系的电子结构、磁性及输运特性方面的重要作用，为开发下一代自旋电子器件提供了宝贵的见解。 显示英文摘要

摘要： Recently, the non-centrosymmetric Weyl semimetallic candidate family RTX (R = rare-earth element, T= poor metal, X = Si and Ge) has recently attracted significant attention due to its exotic quantum states and potential applications in quantum devices. In this study, our comprehensive investigations of high-quality NdGaGe and GdGaGe single crystals reveal distinct magnetic and electrical responses. Both compounds exhibit antiferromagnetic transitions with TN - 7.6 K and 22.4 K for NdGaGe and GdGaGe, respectively. NdGaGe exhibits strong magnetic anisotropy (\c{hi}c /\c{hi}a - 70). In contrast, GdGaGe displays weak magnetic anisotropic behavior (\c{hi}c /\c{hi}a - 1) with a distinctive spin-flop transition. Below TN, NdGaGe shows significant negative magnetoresistance due to the reduced spin-disorder scattering arising from the field-induced spin alignment. GdGaGe exhibits more complex magnetoresistance behavior: positive values at low fields transitioning to negative values attributed to the reduced spin-flop scattering. Specially, NdGaGe demonstrates a large anomalous Hall conductance (AHC) of approximately 368 {\Omega}-1 cm-1, which is dominated by the intrinsic mechanism. These reveal the pivotal role of rare-earth elements in modulating the electronic structure, magnetic properties, and transport characteristics of the RGaGe system, thereby providing valuable insights for developing next-generation spintronic devices.