标题： 热刺激发光和电导率的分析，无需准平衡近似 显示英文标题

标题： Analysis of thermally stimulated luminescence and conductivity without quasiequilibrium approximation

摘要： 热刺激发光（TSL）和电导率（TSC）是使用经典的绝缘体模型进行研究的，该模型假设有一种活性陷阱、一种非活性深陷阱和一种复合中心。 描述该模型的动力学方程在不使用准平衡（QE）近似和使用准平衡（QE）近似的情况下进行数值求解。 用于分析TSL和TSC的参数包括QE状态参数qI、相对复合概率g以及一个称为准稳态（QS）状态参数q*=qIg。 对于五组动力学参数和不同的加热速率，数值计算了TSL和TSC曲线以及qI、q*、g、复合寿命和活性陷阱及复合中心的占据情况随温度的变化。 这些计算结果表明： （1）当存在再捕获过程时，QS状态存在的加热速率上限比QE状态存在的加热速率上限更高；（2）QS状态下的TSL（TSC）曲线具有与QE状态下TSL（TSC）曲线相似的特性。 推导了在TSL和TSC曲线初始范围中计算参数qI和q*的近似公式，并用于本文提出的加热速率方法，以从计算得到的TSL曲线中确定这些参数。 显示英文摘要

摘要： Thermally stimulated luminescence (TSL) and conductivity (TSC) are considered using the classical insulator model that assumes one kind of the active trap, one kind of inactive deep trap, and one kind of the recombination center. Kinetic equations describing the model are solved numerically without and with the use of the quasiequilibrium (QE) approximation. The QE state parameter qI,, the relative recombination probability g, and a new parameter called quasi-stationary (QS) state parameter q*=qIg are used for the analysis of the TSL and TSC. The TSL and TSC curves and the temperature dependences of qI, q*, g, the recombination lifetime, and the occupancies of active traps and recombination centers are numerically calculated for five sets of kinetic parameters and different heating rates. These calculation results show that: (1) the upper limit of the heating rate for presence of the QS state appears at higher heating rate than that for the QE state when the retrapping process is present, and (2) the TSL (TSC) curves in the QS state have the properties similar to those for the TSL (TSC) curves in the QE state. Approximate formulas for calculation of the parameters qI and q* in the initial range of the TSL and TSC curves are derived and used in the heating-rate methods, proposed in this work, for determination of those parameters from the calculated TSL curves.