标题： 钌薄膜中超导行为的研究 显示英文标题

标题： A Study of Superconducting Behavior in Ruthenium Thin Films

摘要： 钌（Ru）由于其低电阻率、小平均自由程以及在纳米尺度下的优异电磁迁移可靠性，是下一代电子互连的有希望的候选材料。 此外，Ru在1 K以下表现出超导性，具有抗氧化性、低扩散性和小的超导能隙，使其成为超导量子位和约瑟夫森结的潜在材料。 在此，我们研究了钌薄膜（11.9 - 108.5 nm厚）的超导行为，观察到转变温度从657.9 mK到557 mK。 最薄的薄膜显示出较弱的厚度依赖性，随后在较厚的薄膜中出现常规的反厚度依赖性。 磁输运研究显示，在脏极限（{\xi }>> l）下表现出II型超导性，相干长度范围从13.5 nm到27 nm。 最后，氧化抗性研究证实，在空气中暴露七周后，RuOx的生长非常有限。 这些发现为将Ru集成到超导电子器件中提供了关键见解。 显示英文摘要

摘要： Ruthenium (Ru) is a promising candidate for the next-generation of electronic interconnects due to its low resistivity, small mean free path, and superior electromigration reliability at nanometer scales. Additionally, Ru exhibits superconductivity below 1 K, with resistance to oxidation, low diffusivity, and a small superconducting gap, making it a potential material for superconducting qubits and Josephson Junctions. Here, we investigate the superconducting behavior of Ru thin films (11.9 - 108.5 nm thick), observing transition temperatures from 657.9 mK to 557 mK. A weak thickness dependence appears in the thinnest films, followed by a conventional inverse thickness dependence in thicker films. Magnetotransport studies reveal type-II superconductivity in the dirty limit ({\xi} >> l), with coherence lengths ranging from 13.5 nm to 27 nm. Finally, oxidation resistance studies confirm minimal RuOx growth after seven weeks of air exposure. These findings provide key insights for integrating Ru into superconducting electronic devices.