标题： 电子束蒸发的钴薄膜在分子束外延制备的GaAs(001)上 显示英文标题

标题： Electron-beam evaporated cobalt films on molecular beam epitaxy prepared GaAs(001)

摘要： 我们通过电子束蒸发方法在GaAs(001)表面沉积了Co薄膜。 薄膜的厚度通过X射线反射和卢瑟福背散射进行测量。 薄膜的磁性特性使用超导量子干涉器件进行测量。 发现薄膜的磁化强度随着薄膜厚度的增加而减少。 磁性性能的轻微退化归因于在Co沉积过程中Co表面或Co/GaAs界面粗糙度的增加。 显示英文摘要

摘要： We have deposited Co films on the GaAs(001) surface by using an e-beam evaporation method. The thicknesses of the Co films are measured by using x-ray reflectivity and Rutherford backscattering. The magnetic properties of the films have been measured using superconducting quantum interference device. The magnetization of the films was found to decrease with increasing film thickness. The slight degradation of magnetic properties is attributed to increasing roughness on the Co surface or the Co/GaAs interface during the Co deposition.