标题： MOS器件中高温电子捕获的原子起源 显示英文标题

标题： Atomic origin of high temperature electron trapping in MOS devices

摘要： 基于宽禁带半导体的MOSFET适用于高温操作，在这种温度下，一些在较低温度下无害的原子尺度过程可能会被激活，从而导致器件退化。 最近，在温度高于150{\deg }C的情况下，观察到在SiC MOSFET中正偏置下电子捕获显著增强。在这里，我们报告了第一性原理计算，显示增强的电子捕获与SiO2中的氧空位热激活捕获第二个电子有关，从而使空位转变为包含一个硅悬空键和一个五配位与四配位硅原子之间键的新结构。 这些结果表明，氧空位及其结构重排在高温MOS器件的可靠性中起着关键作用。 显示英文摘要

摘要： MOSFETs based on wide band-gap semiconductors are suitable for operations at high temperature, at which additional atomic-scale processes that are benign at lower temperatures can get activated which results in device degradation. Recently significant enhancement of electron trapping was observed under positive bias in SiC MOSFETs at temperatures higher than 150{\deg}C. Here we report first-principle calculations showing that the enhanced electron trapping is associated with thermally activated capturing of a second electron by an oxygen vacancy in SiO2, by which the vacancy transforms into a new structure that comprises one Si dangling bond and a bond between a five-fold and a four-fold Si atoms. The results suggest a key role of oxygen vacancies and their structural reconfigurations in the reliability of high-temperature MOS devices.