标题： 氧化铟锡薄膜的常规霍尔效应表征 显示英文标题

标题： Indium Tin Oxide film characterization using the classical Hall effect

摘要： 我们使用经典的霍尔效应来对在二氧化硅基底上通过两种不同技术生长的氧化铟锡（ITO）薄膜进行电学表征。ITO薄膜具有独特的特性，它们既可以导电（例如用于栅极电极）又可以在可见光范围内保持光学透明。在近红外（NIR）区域，透射率通常会降低。然而，原则上可以通过生长更薄的薄膜来补偿光吸收。 显示英文摘要

摘要： We have used the classical Hall effect to electrically characterize Indium Tin Oxide (ITO) films grown by two different techniques on silica substrates. ITO films have the unique property that they can be both electrically conducting (and to be used for a gate electrode for example) as well as optically transparent (at least in the visible part of the spectrum). In the near infrared (NIR) the transmission typically reduces. However, the light absorption can in principle be compensated by growing thinner films.