标题： 一种适用于亚10纳米区域碳纳米管场效应晶体管的紧凑虚拟源模型 - 第二部分 外部元件、性能评估与设计优化 显示英文标题

标题： A Compact Virtual-Source Model for Carbon Nanotube Field-Effect Transistors in the Sub-10-nm Regime - Part II Extrinsic Elements, Performance Assessment, and Design Optimization

摘要： 我们提出了一种数据校准的碳纳米管（CNT）场效应晶体管（CNFETs）紧凑模型，包括接触电阻、直接源漏电流和带间隧穿电流。 该模型捕捉了尺寸缩放和寄生效应导致的性能退化的影响，并用于研究根据目标接触栅极间距选择的CNT直径、CNT密度、接触长度和栅极长度的CNFET驱动电流与漏电流之间的权衡。 我们描述了在缩放极限附近的CNFET器件参数协同优化研究，并结合物理洞察力，预测了在5纳米技术节点下具有估计接触栅极间距为31纳米的CNFET性能。 基于包括寄生电阻、电容和隧穿漏电流的分析，CNT密度为180 CNTs/{\mu }m将使CNFET技术满足ITRS对驱动电流（1.33 mA/{\mu }m）的目标，这在现代实验能力范围内。 显示英文摘要

摘要： We present a data-calibrated compact model of carbon nanotube (CNT) field-effect transistors (CNFETs) including contact resistance, direct source-to-drain and band-to-band tunneling currents. The model captures the effects of dimensional scaling and performance degradations due to parasitic effects and is used to study the trade-offs between the drive current and leakage current of CNFETs according to the selection of CNT diameter, CNT density, contact length, and gate length for a target contacted gate pitch. We describe a co-optimization study of CNFET device parameters near the limits of scaling with physical insight, and project the CNFET performance at the 5-nm technology node with an estimated contacted gate pitch of 31 nm. Based on the analysis including parasitic resistance, capacitance, and tunneling leakage current, a CNT density of 180 CNTs/{\mu}m will enable CNFET technology to meet the ITRS target of drive current (1.33 mA/{\mu}m), which is within reach of modern experimental capabilities