标题： 非极性m面GaN/AlGaN异质结构，在5到10 THz波段的亚带间跃迁 显示英文标题

标题： Nonpolar m-plane GaN/AlGaN heterostructures with intersubband transitions in the 5 to 10 THz band

摘要： 本文评估了在1到10 THz频率范围内的非极性m-面GaN/AlGaN多量子阱中的子带间跃迁，这些多量子阱沉积在自支撑半绝缘GaN衬底上。 量子阱设计为包含两个受限的电子能级，与相邻的阱解耦。 结构分析显示，在两个垂直的平面方向上，量子阱是平坦且规则的，高分辨率图像显示在生长轴方向上势垒中的Al组成存在不均匀性。 我们没有观察到由外延过程引入的扩展结构缺陷。 展示了从1.5到9 THz的低温子带间吸收，覆盖了GaAs基技术无法实现的7到10 THz频段的一部分。 显示英文摘要

摘要： This paper assesses intersubband transitions in the 1 to 10 THz frequency range in nonpolar m-plane GaN/AlGaN multi-quantum-wells deposited on free-standing semi-insulating GaN substrates. The quantum wells were designed to contain two confined electronic levels, decoupled from the neighboring wells. Structural analysis reveals flat and regular quantum wells in the two perpendicular inplane directions, with high-resolution images showing inhomogeneities of the Al composition in the barriers along the growth axis. We do not observe extended structural defects introduced by the epitaxial process. Low-temperature intersubband absorption from 1.5 to 9 THz is demonstrated, covering part of the 7 to 10 THz band forbidden to GaAs-based technologies.