标题： FeMnP0.8Si0.2 单晶中的巡游反铁磁性 显示英文标题

标题： Itinerant Antiferromagnetism in FeMnP0.8Si0.2 Single Crystals

摘要： 基于Fe2P结构的化合物一直吸引着人们的兴趣，因为非中心对称晶体结构中巡游磁性和局域磁性的相互作用，以及这些材料在磁热应用方面的最新发展。 在这里，我们报告了FeMnP0.8Si0.2毫米尺寸单晶的生长和表征。 报告了单晶X射线衍射、磁化率、电阻率、霍尔效应和比热数据。 令人惊讶的是，晶体在158 K以下表现出巡游反铁磁序，在磁化曲线中没有铁磁行为的迹象，且自旋主要在ab平面内有序排列。 室温电阻率接近金属的Ioffe-Regel极限。 单晶X射线衍射表明Mn强烈倾向于占据更大的金字塔形3g位点。 生长的晶体中的阳离子位点偏好和反铁磁性在高温退火和快速淬火至室温后未发生变化。 显示英文摘要

摘要： Compounds based on the Fe2P structure have continued to attract interest because of the interplay between itinerant and localized magnetism in a non-centrosymmetric crystal structure, and because of the recent developments of these materials for magnetocaloric applications. Here we report the growth and characterization of mm size single crystals of FeMnP0.8Si0.2. Single crystal x-ray diffraction, magnetization, resistivity, Hall and heat capacity data are reported. Surprisingly, the crystals exhibit itinerant antiferromagnetic order below 158 K with no hint of ferromagnetic behavior in the magnetization curves and with the spins ordered primarily in the ab plane. The room temperature resistivity is close to the Ioffe-Regel limit for a metal. Single crystal x-ray diffraction indicates a strong preference for Mn to occupy the larger pyramidal 3g site. The cation site preference in the as-grown crystals and the antiferromagnetism are not changed after high temperature anneals and a rapid quench to room temperature.