标题： 基于h-BN封盖的MoS2异质结构薄膜晶体管的气体传感 显示英文标题

标题： Gas Sensing with h-BN Capped MoS2 Heterostructure Thin Film Transistors

摘要： 我们展示了以六方氮化硼(h-BN)薄层封盖的二硫化钼(MoS2)薄膜晶体管的选择性气体传感。电阻变化被用作检测乙醇、丙烯腈、甲苯、氯仿和甲醇等化学蒸气的传感参数。发现h-BN介电钝化层不会阻止通过活性MoS2薄膜通道中的源漏电流变化进行气体检测。在设计MoS2薄膜气体传感器时，使用h-BN盖层（厚度H=10 nm）可提高器件稳定性并防止因环境和化学暴露导致的器件退化。获得的结果对于范德华材料在化学和生物传感中的应用具有重要意义。 显示英文摘要

摘要： We have demonstrated selective gas sensing with molybdenum disulfide (MoS2) thin films transistors capped with a thin layer of hexagonal boron nitride (h-BN). The resistance change was used as a sensing parameter to detect chemical vapors such as ethanol, acetonitrile, toluene, chloroform and methanol. It was found that h-BN dielectric passivation layer does not prevent gas detection via changes in the source-drain current in the active MoS2 thin film channel. The use of h-BN cap layers (thickness H=10 nm) in the design of MoS2 thin film gas sensors improves device stability and prevents device degradation due to environmental and chemical exposure. The obtained results are important for applications of van der Waals materials in chemical and biological sensing.