标题： 混合石墨烯-氮化硼椅式纳米带基n-MOSFET在弹道极限下的空位缺陷分析 显示英文标题

标题： Analysis of Vacancy defects in Hybrid Graphene-Boron Nitride Armchair Nanoribbon based n-MOSFET at Ballistic Limit

摘要： 在这里，我们使用非平衡格林函数（NEGF）方法报告了基于混合石墨烯-氮化硼嵌入的扶手椅状纳米带（a-GNR-BN）的空位影响超晶胞在其弹道传输极限下的性能。 一个超晶胞由扶手椅状纳米带的3p配置组成，在两侧掺杂6个BN原子，并且也进行了H钝化。 研究的空位类型包括单空位（移除B）、双空位（移除B和N原子）以及孔洞（移除6个原子），所有这些空位都形成于碳和BN原子的界面处。 密度泛函理论（DFT）被用来评估该超晶胞的材料特性，如带隙、有效质量和态密度（DOS）。 进一步地，带隙和有效质量被用于自洽泊松-薛定谔计算器，该计算器使用NEGF方法进行公式化。 对于所有空位缺陷，材料特性均表现出下降，其中孔洞缺陷的下降更为显著。 这一观察结果在器件特性中也是一致的，其中ON电流（ION）和亚阈值斜率（SS）对于孔洞空位显示出最大增加，当缺陷数量增加时，增加更加显著。 显示英文摘要

摘要： Here, we report the performance of vacancy affected supercell of a hybrid Graphene-Boron Nitride embedded armchair nanoribbon (a-GNR-BN) based n-MOSFET at its ballistic transport limit using Non Equilibrium Green's Function (NEGF) methodology. A supercell is made of the 3p configuration of armchair nanoribbon that is doped on the either side with 6 BN atoms and is also H-passivated. The type of vacancies studied are mono (B removal), di (B and N atom removal) and hole (removal of 6 atoms) formed all at the interface of carbon and BN atoms. Density Functional Theory (DFT) is employed to evaluate the material properties of this supercell like bandgap, effective mass and density of states (DOS). Further band gap and effective mass are utilized in self-consistent PoissonSchrodinger calculator formalized using NEGF approach. For all the vacancy defects, material properties show a decrease which is more significant for hole defects. This observation is consistent in the device characteristics as well where ON-current (ION ) and Sub Threshold Slope (SS) shows the maximum increment for hole vacancy and increase is more significant becomes when the number of defects increase.