标题： 铜在氮化硼纳米网格上的欠电位沉积 显示英文标题

标题： Copper underpotential deposition on boron nitride nanomesh

摘要： 氮化硼纳米网格是一种在Rh(111)上的六方氮化硼（h-BN）波纹单层，到目前为止，它主要是在超高真空条件下进行研究的。 在这里，我们研究如何利用铜的欠电位沉积（upd）来量化氮化硼单层中的缺陷，并评估纳米网格的电位窗口，这对于在环境和电化学条件下探索其功能非常重要。 在稀释的硫酸中，h-BN/Rh(111)的电位窗口接近1伏特，即大于Rh基底的电位窗口，并且在负极由分子氢的析出限制，在正极由氧化去除限制。 从原始的h-BN/Rh(111)晶圆样品上的铜 upd，我们估计缺陷的集体分数约为几何面积的0.08-0.7%，这可能来源于在化学气相沉积过程中产生的h-BN层中的线缺陷和点缺陷。 过电位沉积（opd）被证明对缺陷面积有显著影响。 我们假设这种非无害的Cu电沉积涉及起始于初始缺陷的插入，导致h-BN层不可逆的剥离；这种效应可能用于二维材料的纳米工程。 在相关的时间尺度上，upd本身在重复循环中不会改变缺陷面积；因此，金属upd可能作为一种通用工具，用于确定二维材料与各种基底金属之间的混合物中的集体缺陷面积。 显示英文摘要

摘要： The boron nitride nanomesh is a corrugated monolayer of hexagonal boron nitride (h-BN) on Rh(111), which so far has been studied mostly under ultrahigh vacuum conditions. Here, we investigate how copper underpotential deposition (upd) can be used to quantify defects in the boron nitride monolayer and to assess the potential window of the nanomesh, which is important to explore its functionality under ambient and electrochemical conditions. In dilute sulfuric acid, the potential window of h-BN/Rh(111) is close to 1 volt, i.e. larger than that of the Rh substrate, and is limited by molecular hydrogen evolution on the negative and by oxidative removal on the positive side. From copper upd on pristine h-BN/Rh(111) wafer samples, we estimate a collective defect fraction on the order of 0.08-0.7% of the geometric area, which may arise from line and point defects in the h-BN layer that are created during its chemical vapour deposition. Overpotential deposition (opd) is demonstrated to have significant consequences on the defect area. We hypothesise that this non-innocent Cu electrodeposition involves intercalation originating at initial defects, causing irreversible delamination of the h-BN layer; this effect may be used for 2D material nanoengineering. On the relevant timescale, upd itself does not alter the defect area on repeated cycling; therefore, metal upd may find use as a general tool to determine the collective defect area in hybrids between 2D materials and various substrate metals.