标题： 硅掺杂的单层石墨烯中的缺陷：磁量化 显示英文标题

标题： Si-doped Defect in Monolayer Graphene: Magnetic Quantization

摘要： 我们使用广义紧束缚模型，研究了不同浓度和构型的硅掺杂石墨烯缺陷系统的丰富而独特的磁量化特性。 该模型同时考虑了非均匀的键长、位点能量和跃迁积分，以及均匀的垂直磁场（${B_z\hat z}$）。 磁化量子化的劳伦兹能级（LLs）根据概率分布和振荡模式被分为四种不同的类型。 LLs 的主要特征在磁光选择规则中明显体现，这些规则涵盖了主导的${\Delta\,n=|n^v-n^c|=0}$，共存的${\Delta\,n=0}$ $\&$${\Delta\,n=1}$，以及特定的${\Delta\,n=1}$。 这些关于LL间激发的规则来源于超晶胞中A$_i$和B$_i$子晶格的非等价或等价性。 显示英文摘要

摘要： We explore the rich and unique magnetic quantization of Si-doped graphene defect systems with various concentrations and configurations using the generalized tight-binding model. This model takes into account simultaneously the non-uniform bond lengths, site energies and hopping integrals, and a uniform perpendicular magnetic field (${B_z\hat z}$). The magnetic quantized Landau levels (LLs) are classified into four different kinds based on the probability distributions and oscillation modes. The main characteristics of LLs are clearly reflected in the magneto-optical selection rules which cover the dominating ${\Delta\,n=|n^v-n^c|=0}$, the coexistent ${\Delta\,n=0}$ $\&$ ${\Delta\,n=1}$, and the specific ${\Delta\,n=1}$. These rules for inter-LLs excitations come from the non-equivalence or equivalence of the A$_i$ and B$_i$ sublattices in a supercell.