标题： TO_BE_TRANSLATED: Zero-Threshold Rectification Using Low Energy Barrier Nano-Magnets 显示英文标题

标题： Zero-Threshold Rectification Using Low Energy Barrier Nano-Magnets

摘要： TO_BE_TRANSLATED: Nanomagnets with high energy barriers ($\sim$40-60 $k_BT$) have been the center of focus for various spintronics applications. Recently, low energy barrier magnets have attracted growing interest in the community for novel applications such as random number generation, stochastic oscillators, and probabilistic computation. In this paper, we predict that a low barrier magnet (LBM), either with an in-plane or perpendicular anisotropy, should exhibit zero-threshold rectification when combined with the physics of spin-momentum locking (SML) observed in high spin-orbit materials e.g. transition metals, semimetals, topological insulators, narrow band-gap semiconductors, etc. The basic idea is to measure the charge current induced spin accumulation in the SML channel using the LBM, while the magnetization of the LBM on average follows the accumulated spins due to the spin-orbit torque. Using experimentally benchmarked models, we show that these experiments can be used to characterize such stochastic magnets and extract parameters that determine (i) the spin-orbit torque induced magnetization pinning and (ii) the frequency band of rectification. We argue that the frequency band can be explained from the angular momentum conservation principles and provide an empirical expression that is valid for LBMs with in-plane and perpendicular anisotropies. The proposed structure could find application as highly sensitive passive RF detectors and as energy harvesters from weak ambient sources where standard technologies may not operate. 显示英文摘要

摘要： Nanomagnets with high energy barriers ($\sim$40-60 $k_BT$) have been the center of focus for various spintronics applications. Recently, low energy barrier magnets have attracted growing interest in the community for novel applications such as random number generation, stochastic oscillators, and probabilistic computation. In this paper, we predict that a low barrier magnet (LBM), either with an in-plane or perpendicular anisotropy, should exhibit zero-threshold rectification when combined with the physics of spin-momentum locking (SML) observed in high spin-orbit materials e.g. transition metals, semimetals, topological insulators, narrow band-gap semiconductors, etc. The basic idea is to measure the charge current induced spin accumulation in the SML channel using the LBM, while the magnetization of the LBM on average follows the accumulated spins due to the spin-orbit torque. Using experimentally benchmarked models, we show that these experiments can be used to characterize such stochastic magnets and extract parameters that determine (i) the spin-orbit torque induced magnetization pinning and (ii) the frequency band of rectification. We argue that the frequency band can be explained from the angular momentum conservation principles and provide an empirical expression that is valid for LBMs with in-plane and perpendicular anisotropies. The proposed structure could find application as highly sensitive passive RF detectors and as energy harvesters from weak ambient sources where standard technologies may not operate.