标题： Al2O3原子层沉积的物理性能厚度依赖性 显示英文标题

标题： Thickness Dependence of the Physical Properties of Atomic-Layer Deposited Al2O3

摘要： 受自然启发，我们研究了短程有序效应对非晶材料物理性质的影响。 非晶Al2O3薄膜在其表面附近表现出更高比例的四配位Al位点，导致薄膜平均短程有序度的变化。 在某些厚度以下，这些薄膜的密度会随着尺寸变化。 在本工作中，我们通过厚度研究了短程有序效应对原子层沉积（ALD）非晶Al2O3薄膜电子和光学性质的影响。 折射率和介电常数都被发现随尺寸变化。 折射率随着厚度增加而增加，对于厚膜（约50 nm）其值与块体非晶Al2O3相当。 介电常数也随着厚度增加而增加，但未达到块体材料的水平。 我们讨论了这些效应如何与密度和短程有序相关。 这些结果揭示了薄非晶氧化物中的尺寸效应，可能指导电子和光学元件及器件的设计。 显示英文摘要

摘要： Inspired by nature, we investigate the short-range order effect on the physical properties of amorphous materials. Amorphous Al2O3 thin films exhibit a higher proportion of their 4-coordinated Al sites close to the surface, causing variations in the average short-range order of the film. Below some thickness, the density of these films changes with size. In this work, we address the short-range order effect, through the thickness, on the electronic and optical properties of atomic layer deposited (ALD) Al2O3 thin films. Both the refractive index and the permittivity were found to vary with size. The refractive index increased with thickness, and for thick films (~50 nm) it was comparable to that of bulk amorphous Al2O3. The permittivity increased with thickness as well, but did not attain those of the bulk material. We discuss how these effects correlate with the density and short-range order. These results shed light on the size effects in thin amorphous oxides, and may guide the design of electronic and optical components and devices.