标题： 摇摆曲线成像测量4H-SiC中的位错 显示英文标题

标题： Measurements of dislocations in 4H-SiC with rocking curve imaging

摘要： 4H 硅 carbide (4H-SiC) 具有许多吸引人的特性，例如高载流子迁移率、宽禁带和高热导率，使其成为高压电子器件的理想候选材料。 然而，在利用 4H-SiC 时的主要挑战之一是外延层中存在缺陷，这些缺陷会显著降低器件性能。 在这项研究中，我们使用了带有掠射曲线成像技术的 X 射线透射拓扑术来表征 4H-SiC 中的缺陷类型和分布。通过拟合高斯参数得到的映射图被用来研究 4H-SiC 中的位错。 了解位错的分布可以深入了解整体晶体质量，这可以指导改进制造工艺。 显示英文摘要

摘要： 4H Silicon Carbide (4H-SiC) combines many attractive properties such as a high carrier mobility, a wide bandgap, and a high thermal conductivity, making it an ideal candidate for high-power electronic devices. However, a primary challenge in utilizing 4H-SiC is the presence of defects in epitaxial layers, which can significantly degrade device performance. In this study, we have used X-ray transmission topography with a rocking curve imaging technique to characterize the types and distribution of defects in 4H-SiC. The derived maps from the fitted Gaussian parameters were used to investigate dislocations in 4H-SiC. Understanding the distribution of the dislocations provides valuable insights into the overall crystal quality, which can guide improvements for the fabrication processes.