标题： 二维半导体中激子局域化的介电环境修饰 显示英文标题

标题： Exciton localization in two-dimensional semiconductors through modification of the dielectric environment

摘要： 单层半导体因其原子尺度的厚度，在半导体薄膜与周围材料之间的界面非常尖锐，从而呈现出独特的静电环境。 这些界面显著影响准粒子能带结构以及载流子之间的静电相互作用。 这些材料的一个关键研究领域是在超薄层内束缚电子-空穴对（激子）的行为，这对其光电特性起着至关重要的作用。 在这项工作中，我们研究了通过设计周围的介电环境来生成完全限制激子的势阱的可能性。 通过评估夹在单层材料之间的介电材料对带隙重整化和电子-空穴库仑相互作用强度的双重影响，我们预期存在低能区域，在其中可以实现激子质心的局域化。 我们的结果表明，对于某些介电配置，有可能将激子本征能量以数十meV的量级完全离散化。 这种二维激子能级的量子化可被用于新一代光电设备的应用中，这对于量子计算和量子通信等技术的发展至关重要。 显示英文摘要

摘要： Monolayer semiconductors, given their thickness at the atomic scale, present unique electrostatic environments due to the sharp interfaces between the semiconductor film and surrounding materials. These interfaces significantly impact both the quasiparticle band structure and the electrostatic interactions between charge carriers. Akey area of interest in these materials is the behavior of bound electron-hole pairs (excitons) within the ultra-thin layer, which plays a crucial role in its optoelectronic properties. In this work, we investigate the feasibility of generating potential traps that completely confine excitons in the thin semiconductor by engineering the surrounding dielectric environment. By evaluating the simultaneous effects on bandgap renormalization and modifications to the strength of the electron-hole Coulomb-interaction, both associated to the modulation of the screening by the materials sandwiching the monolayer, we anticipate the existence of low-energy regions in which the localization of the exciton center of mass may be achieved. Our results suggest that for certain dielectric configurations, it is possible to generate complete discretization of exciton eigenenergies in the order of tens of meV. Such quantization of energy levels of two-dimensional excitons could be harnessed for applications in new-generation optoelectronic devices, which are necessary for the advancement of technologies like quantum computing and quantum communication.