标题： SiGe衬底引起的张应力锗电子g因子及其对生长方向的依赖性 显示英文标题

标题： Electron g-factor of strained Ge caused by the SiGe substrate and its dependence on growth directions

摘要： 对于光子自旋转换，由于其具有高性能自旋量子比特以及覆盖通信波段的光学跃迁潜力，锗硅/锗应变量子阱中的空穴体系引起了广泛关注。 我们使用八带模型计算了应变锗的电子g因子，并分析了其在生长方向（[100]、[110]和[111]）以及SiGe衬底锗含量上的依赖性。 我们的结果显示，电子g因子的绝对值随着锗含量的减少而减小，在所有生长方向上从大约-3.0到-1.4不等。 显示英文摘要

摘要： For photon-spin conversion, the Ge hole system in a strained GeSi/Ge quantum well with a diamond structure has attracted significant attention because of the potential for a high-performance spin qubit and optical transitions ranging in telecom bands. We calculated the electron g-factor for strained Ge, analyzing its dependence on both the growth directions ([100], [110], and [111]) and the Ge content of the SiGe substrate using an 8-band model. Our results indicate that the absolute values of the electron g-factor decrease with decreasing Ge content, ranging from approximately -3.0 to -1.4 for all growth directions.