标题： 用于硅自旋量子比特的电互连 显示英文标题

标题： Electrical Interconnects for Silicon Spin Qubits

摘要： 可扩展的自旋量子位设备可能需要长程量子比特互连。我们提议通过使用电阻性顶栅来创建这样的互连。顶栅被正向偏置，以在两个点之间形成一个通道；纳米线两端的电压差会产生一个电场，推动电子从源点到目标点。电子动量不相干，但不一定是自旋不相干的；我们评估了由于自旋轨道耦合、谷物理和核自旋杂质对自旋相干性的威胁。我们发现自旋轨道耦合是主要威胁，但由于频繁散射导致动量空间运动变窄，部分保护了电子，使得在合理参数下特征退相干长度约为15毫米。 显示英文摘要

摘要： Scalable spin qubit devices will likely require long-range qubit interconnects. We propose to create such an interconnect with a resistive topgate. The topgate is positively biased, to form a channel between the two dots; an end-to-end voltage difference across the nanowire results in an electric field that propels the electron from source dot to target dot. The electron is momentum-incoherent, but not necessarily spin-incoherent; we evaluate threats to spin coherence due to spin-orbit coupling, valley physics, and nuclear spin impurities. We find that spin-orbit coupling is the dominant threat, but momentum-space motional narrowing due to frequent scattering partially protects the electron, resulting in characteristic decoherence lengths ~15 mm for plausible parameters.