标题： 应变电子磁隧道结用于模拟计算：展望 显示英文标题

标题： Straintronic magnetic tunnel junctions for analog computation: A perspective

摘要： 应变电子磁隧道结（s-MTJ）是一种MTJ，其电阻状态可以通过门电压产生的应力连续或逐渐地从高到低改变，而门电压作用于磁致伸缩软层。 这一不同寻常的特性通常在通过自旋传递扭矩、自旋轨道扭矩或电压控制磁各向异性而突然切换的MTJ中无法获得，这使得许多模拟应用成为可能，在这些应用中，MTJ（开关的开/关比）通常较低的隧穿磁阻比和相对较大的切换错误率不会构成严重障碍，与数字逻辑或存储器不同。 更重要的是，s-MTJ的传输特性（电导与门电压的关系）总是具有一线性区域，可以被有效利用来实现模拟算术、矢量矩阵乘法以及深度学习网络中的线性突触。 在这些应用中，s-MTJ实际上优于已知的更广泛的忆阻器和畴壁突触，因为它们不具备线性和/或模拟行为。 显示英文摘要

摘要： The straintronic magnetic tunnel junction (s-MTJ) is an MTJ whose resistance state can be changed continuously or gradually from high to low with a gate voltage that generates strain the magnetostrictive soft layer. This unusual feature, not usually available in MTJs that are switched abruptly with spin transfer torque, spin-orbit torque or voltage-controlled-magnetic-anisotropy, enables many analog applications where the typically low tunneling magneto-resistance ratio of MTJs (on/off ratio of the switch) and the relatively large switching error rate are not serious impediments unlike in digital logic or memory. More importantly, the transfer characteristic of a s-MTJ (conductance versus gate voltage) always sports a linear region that can be exploited to implement analog arithmetic, vector matrix multiplication and linear synapses in deep learning networks very effectively. In these applications, the s-MTJ is actually superior to the better known memristors and domain wall synapses which do not exhibit the linearity and/or the analog behavior.