标题： 一步法合成含有拓扑缺陷的石墨烯 显示英文标题

标题： One-step synthesis of graphene containing topological defects

摘要： 化学气相沉积法能够实现理想石墨烯的大区域生长，然而石墨烯的许多应用需要可控地引入特定缺陷。 我们提出了一种一步化学气相沉积工艺，旨在在生长的碳质薄膜中保留前体的拓扑结构。 当使用azupyrene作为前体时，其是石墨烯中Stone-Wales缺陷的分子类似物，根据铜基底的生长温度，可以生成具有多种形态的碳质单层。 沉积过程中基底温度越高，所得单层越接近理想石墨烯。 通过一系列互补的材料表征技术进行分析，揭示了形态变化与原子吸附高度、网络拓扑结构以及5-/7元碳环浓度的变化密切相关。 工程化的缺陷碳单层可以转移到不同的基底上，可能在纳米电子学、传感和催化领域实现应用。 显示英文摘要

摘要： Chemical vapour deposition enables large-domain growth of ideal graphene, yet many applications of graphene require the controlled inclusion of specific defects. We present a one-step chemical vapour deposition procedure aimed at retaining the precursor topology when incorporated into the grown carbonaceous film. When azupyrene, the molecular analogue of the Stone-Wales defect in graphene, is used as a precursor, carbonaceous monolayers with a range of morphologies are produced as a function of the copper substrate growth temperature. The higher the substrate temperature during deposition, the closer the resulting monolayer is to ideal graphene. Analysis, with a set of complementary materials characterisation techniques, reveals morphological changes closely correlated with changes in the atomic adsorption heights, network topology, and concentration of 5-/7-membered carbon rings. The engineered defective carbon monolayers can be transferred to different substrates, potentially enabling applications in nanoelectronics, sensorics, and catalysis.