标题： 面向高性能计算的优化低温CMOS技术：阈值电压<0.2V且跨导>1.2mA/μm 显示英文标题

标题： Optimized Cryo-CMOS Technology with VTH<0.2V and Ion>1.2mA/um for High-Peformance Computing

摘要： 我们报告了一种设计-技术协同优化（DTCO）方案，用于开发一种用于高性能计算（HPC）的28纳米低温CMOS（Cryo-CMOS）技术。精确调整的 halo注入能够补偿低温下的阈值电压（VTH）偏移。经过优化的NMOS和PMOS晶体管，其特征为VTH < 0.2V，亚阈值摆幅（SS）< 30 mV/dec，在77K时开启电流（Ion）> 1.2 mA/μm，保证了可靠的低于0.6V的操作。此外，由于跨导更高而继承的增强驱动能力使环振荡器频率提高了20%，同时在77K下将计算密集型低温IC系统的功耗降低了37%。 显示英文摘要

摘要： We report the design-technology co-optimization (DTCO) scheme to develop a 28-nm cryogenic CMOS (Cryo-CMOS) technology for high-performance computing (HPC). The precise adjustment of halo implants manages to compensate the threshold voltage (VTH) shift at low temperatures. The optimized NMOS and PMOS transistors, featured by VTH<0.2V, sub-threshold swing (SS)<30 mV/dec, and on-state current (Ion)>1.2mA/um at 77K, warrant a reliable sub-0.6V operation. Moreover, the enhanced driving strength of Cryo-CMOS inherited from a higher transconductance leads to marked improvements in elevating the ring oscillator frequency by 20%, while reducing the power consumption of the compute-intensive cryogenic IC system by 37% at 77K.