标题： 可重构的SWCNT铁电场效应晶体管阵列 显示英文标题

标题： Reconfigurable SWCNT ferroelectric field-effect transistor arrays

摘要： 可重构器件因其能缓解传统CMOS技术的扩展需求而受到广泛关注，因为它们使用更少的组件即可构建功能相似的电路。 先前的研究需要对栅极终端（除了主要栅极终端外）持续施加电压进行编程，这削弱了可重构器件在实现紧凑且功耗低的集成电路方面的优势。 在此，我们通过将由高度取向的单层SWCNT半导体通道与铁电AlScN栅介质结合的单栅场效应晶体管（FET）结构，实现了可重构器件，所有工艺均兼容CMOS后端工艺（BEOL）。 我们在一个厘米级阵列（约1 cm²）中展示了这些SWCNT铁电FET（FeFET），该阵列包含约735个器件，阵列中器件特性具有高的空间均匀性。 这些器件表现出双极转移特性，具有高导通电流和超过10^5的电流开/关比，在3 V漏电压下，电子和空穴传导之间的平衡非常好（约270{\mu }A/{\mu }m）。当作为非易失性存储器使用时，SWCNT FeFET在空穴和电子传导区域分别表现出0.26 V/nm和0.08 V/nm的大存储窗口，并且在长达10^4秒的时间内表现出优异的保持特性。通过切换AlScN中的自发极化并在低于矫顽电压的电压范围内操作晶体管，还可以实现p-FET和n-FET模式之间的重复重构。 我们通过电路仿真发现，与基于硅CMOS技术或基于电阻式非易失性器件的电路相比，可重构的SWCNT晶体管可以使用更少的器件实现三态内容地址存储器（TCAM）。 显示英文摘要

摘要： Reconfigurable devices have garnered significant attention for alleviating the scaling requirements of conventional CMOS technology, as they require fewer components to construct circuits with similar function. Prior works required continuous voltage application for programming gate terminal(s) in addition to the primary gate terminal, which undermines the advantages of reconfigurable devices in realizing compact and power-efficient integrated circuits. Here, we realize reconfigurable devices based on a single-gate field-effect transistor (FET) architecture by integrating semiconducting channels consisting of a monolayer film of highly aligned SWCNTs with a ferroelectric AlScN gate dielectric, all compatible with CMOS back-end-of-line (BEOL) processing. We demonstrated these SWCNT ferroelectric FETs (FeFETs) in a centimeter-scale array (~1 cm^2) comprising ~735 devices, with high spatial uniformity in device characteristics across the array. The devices exhibited ambipolar transfer characteristics with high on-state currents and current on/off ratios exceeding 10^5, demonstrating an excellent balance between electron and hole conduction (~270 {\mu}A/{\mu}m at a drain voltage of 3 V. When functioning as a non-volatile memory, the SWCNT FeFETs demonstrated large memory windows of 0.26 V/nm and 0.08 V/nm in the hole and electron conduction regions, respectively, combined with excellent retention behavior for up to 10^4 s. Repeated reconfiguration between p-FET and n-FET modes was also enabled by switching the spontaneous polarization in AlScN and operating the transistor within a voltage range below the coercive voltage. We revealed through circuit simulations that reconfigurable SWCNT transistors can realize ternary content-addressable memory (TCAM) with far fewer devices compared to circuits based on silicon CMOS technology or based on resistive non-volatile devices.