标题： 混合铁电隧道结：现状、挑战与机遇 显示英文标题

标题： Hybrid ferroelectric tunnel junctions: State-of-the-art, challenges and opportunities

摘要： 铁电隧道结（FTJs）利用铁电性和量子隧穿的独特组合，因此为下一代非易失性存储技术带来了新的机遇。 最近在超薄异质结构的制造方面的进展，使得铁电材料与各种功能材料的集成成为可能，形成了混合隧穿二极管结。 这些结受益于通过铁电极化对功能层/铁电界面的调制，从而在隧穿电电阻之外实现了更多的模式和功能能力。 本观点旨在深入探讨几种典型铁电混合结的新颖物理现象，从铁电/电介质、铁电/多铁、铁电/超导到铁电/二维材料，最终扩展到铁电共振隧穿二极管（FeRTDs）领域。 后者，即共振隧穿，为在铁电异质结构中利用隧穿行为提供了一种根本性的新方法。 我们讨论了成功展示了室温下对共振峰、峰值处的隧穿电流比和负微分电阻等参数的铁电控制的例子。 我们通过总结挑战并突出强调未来混合FTJs发展的机会，特别是对一种新型FeRTD器件的特别关注，来结束本观点。 性能提升和功能扩展的前景使混合FTJs和FeRTDs在未来的纳米电子学中充满巨大的兴奋感。 显示英文摘要

摘要： Ferroelectric tunnel junctions (FTJs) harness the unique combination of ferroelectricity and quantum tunneling, and thus herald new opportunities in next-generation nonvolatile memory technologies. Recent advancements in the fabrication of ultrathin heterostructures have enabled the integration of ferroelectrics with various functional materials, forming hybrid tunneling-diode junctions. These junctions benefit from the modulation of the functional layer/ferroelectric interface through ferroelectric polarization, thus enabling further modalities and functional capabilities than in addition to tunneling electroresistance. This perspective aims to provide in-depth insight into novel physical phenomena of several typical ferroelectric hybrid junctions, ranging from ferroelectric/dielectric, ferroelectric/multiferroic, ferroelectric/superconducting to ferroelectric/2D materials, and finally their expansion into the realm of ferroelectric resonant tunneling diodes (FeRTDs). This latter aspect, i.e., resonant tunneling offers a radically new approach to exploiting tunneling behavior in ferroelectric heterostructures. We discuss examples that have successfully shown room temperature ferroelectric control of parameters such as the resonant peak, tunnel current ratio at peak and negative differential resistance. We conclude the perspective by summarizing the challenges and highlighting the opportunities for the future development of hybrid FTJs with a special emphasis on a new possible type of FeRTD device. The prospects for enhanced performance and expanded functionality ignite tremendous excitement in hybrid FTJs and FeRTDs for future nanoelectronics.