标题： 磁电阻和霍尔电阻率在反铁磁CrSb中的尺度行为 显示英文标题

标题： Scaling Behavior of Magnetoresistance and Hall Resistivity in Altermagnet CrSb

摘要： 反铁磁体（AM）的发现标志着磁性材料的一个重要进展，结合了铁磁性和反铁磁性的特征。 在本快报中，我们关注CrSb，它已被证实是一种AM，并在费米能级附近表现出显著的自旋分裂。 在成功生长出高质量的CrSb单晶后，我们进行了全面的磁化、磁阻（MR）和霍尔电阻率测量，以及电子结构和费米面（FS）计算，以及磁输运性质的数值模拟。 在$T_{N}$= 712 K处发生的反铁磁转变被重新确认。 发现实验测得的MR和霍尔电阻率与数值模拟结果一致，并表现出明显的标度行为。 非线性霍尔电阻率是由于其多带结构，而不是异常霍尔效应（AHE）。 特别是，在AM材料中首次观察到了霍尔电阻率的标度行为。 这些发现表明，CrSb中的磁输运特性起源于内在的电子结构，并由洛伦兹力主导。 显示英文摘要

摘要： The discovery of altermagnet (AM) marks a significant advancement in magnetic materials, combining characteristics of both ferromagnetism and antiferromagnetism. In this Letter, we focus on CrSb, which has been verified to be an AM and to exhibit substantial spin splitting near the Fermi level. After successfully growing high-quality CrSb single crystals, we performed comprehensive magnetization, magnetoresistance (MR), and Hall resistivity measurements, along with the electronic structure, and Fermi surface (FS) calculations, as well as the magneto-transport property numerical simulations. An antiferromagnetic transition occurring at $T_{N}$ = 712 K was reconfirmed. It was found that both experimental MR and Hall resistivity are consistent with the numerical simulation results, and exhibit obvious scaling behavior. The nonlinear Hall resistivity is due to its multi-band structure, rather than an anomalous Hall effect (AHE). Especially, the scaling behavior in Hall resistivity is first observed within an AM material. These findings demonstrate that the magneto-transport properties in CrSb originate from the intrinsic electronic structure and are dominated by the Lorentz force.