标题： 量子点层形貌和厚度的朗道-列维奇尺度优化以增强量子点发光二极管性能 显示英文标题

标题： Landau-Levich Scaling for Optimization of Quantum Dot Layer Morphology and Thickness for Enhanced Quantum-Dot Light-Emitting Diode Performance

摘要： 量子点（QD）发光二极管（QLEDs）因其高效率、亮度、宽色域和可溶液加工性，被认为是下一代显示器的有前途的候选材料。 电致发光QLED的大规模溶液加工面临重大挑战，尤其是在活性层厚度和均匀性的精确控制方面。 这些障碍直接影响电荷传输，导致电流泄漏和整体效率降低。 刮刀涂布是一种普遍且可扩展的溶液加工技术，以速度快和浪费少而闻名。 此外，它允许连续的“卷对卷”加工，使其在各种应用中高度适应。 在本研究中，我们展示了在兰道-列维奇（Landau-Levich）区域中刮刀速度的精确控制，以创建均匀的QD发射层，使用商用CdSe/ZnS QD作为代表性例子。 由于相互作用能的变化，QD在玻璃和QLED器件的底层上会形成不同的形态。 通过调整刮刀速度，QD膜厚度可以从单层变为多层，这可以通过拟合兰道-列维奇-德热金理论来预测。 在7 mm/s的最佳速度下，得到的QD膜表面覆盖度约为163%，粗糙度较低（均方高度为1.57 nm）。 使用商业可用的CdSe/ZnS QD（具有低光致发光量子产率（PLQY））实现了约1.5%的QLED外部量子效率（EQE），而使用实验室制备的InP/ZnSe/ZnS QD（溶液PLQY为74%）获得了约7%的EQE。 通过采用优化的QD层速度，进一步证明了全刮刀涂布的CdSe-QLED。 这种方法展示了在具有均匀发射特性和低废物生产的低成本、可重复和可扩展的QLED技术方面的显著潜力。 显示英文摘要

摘要： Quantum dot (QD) light-emitting diodes (QLEDs) are promising candidates for next-generation displays because of their high efficiency, brightness, broad color gamut, and solution-processability. Large-scale solution-processing of electroluminescent QLEDs poses significant challenges, particularly concerning the precise control of the active layer's thickness and uniformity. These obstacles directly impact charge transport, leading to current leakage and reduced overall efficiency. Blade-coating is a prevalent and scalable solution processing technique known for its speed and minimal waste. Additionally, it allows for continuous "roll-to-roll" processing, making it highly adaptable in various applications. In this study, we demonstrate the precise control of blade speed in the Landau-Levich regime to create a uniform QD emission layer, using a commercial CdSe/ZnS QD as a representative example. QDs assemble into different morphologies on glass and the underlying layers of the QLED device due to variations in interaction energy. The QD film thickness can be modified from monolayer to multilayer by adjusting blade speed, which can be predicted by fitting the Landau-Levich-Derjaguin theory. The optimal speed at 7 mm/s results in a QD film with a surface coverage of around 163% and low roughness (1.57 nm mean square height). The QLED external quantum efficiency (EQE) of approximately 1.5% was achieved using commercially available CdSe/ZnS QDs with low photoluminescence quantum yield (PLQY), and an EQE of around 7% has been obtained using lab-made InP/ZnSe/ZnS QDs having a solution PLQY of 74%. All-blade-coated CdSe-QLEDs are further demonstrated by adopting the optimized speed for the QD layer. This method demonstrates significant potential for developing low-cost, reproducible, and scalable QLED technologies with uniform emission characteristics and low-waste production.