标题： 在扫描电子显微镜中解析电子羽流 显示英文标题

标题： Resolving the Electron Plume within a Scanning Electron Microscope

摘要： 扫描电子显微镜（SEM），一种百年技术，如今是成像纳米结构表面的普遍方法。 然而，大多数SEM探测器只是计算感兴趣材料产生的二次电子数量，从而忽略了其中包含的丰富材料信息。 在这里，通过对接标准SEM工具进行简单修改，我们通过直接成像SEM电子束产生的电子羽流，解析了二次电子的动量和能量信息。 利用这些光谱成像能力，我们的技术能够成像典型硅p-n结上的横向电场，并区分不同掺杂区域，即使这些区域埋藏在通常由SEM可访问的深度之下。 有趣的是，该技术的亚表面灵敏度揭示了在名义上钝化的半导体结构中出人意料的强表面能带弯曲，为复杂的分层组件设计提供了有用的见解，其中界面动力学决定了器件操作。 这些对复杂电子元件进行非侵入性、多模式探测的能力在当今电子制造中至关重要，但即使使用复杂技术也大多难以实现。 这些结果表明，看似简单的SEM可以扩展以探测复杂且有用材料特性。 显示英文摘要

摘要： Scanning electron microscopy (SEM), a century-old technique, is today a ubiquitous method of imaging the surface of nanostructures. However, most SEM detectors simply count the number of secondary electrons from a material of interest, and thereby overlook the rich material information contained within them. Here, by simple modifications to a standard SEM tool, we resolve the momentum and energy information of secondary electrons by directly imaging the electron plume generated by the electron beam of the SEM. Leveraging these spectroscopic imaging capabilities, our technique is able to image lateral electric fields across a prototypical silicon p-n junctions and to distinguish differently doped regions, even when buried beyond depths typically accessible by SEM. Intriguingly, the sub-surface sensitivity of this technique reveals unexpectedly strong surface band bending within nominally passivated semiconductor structures, providing useful insights for complex layered component designs, in which interfacial dynamics dictate device operation. These capabilities for non-invasive, multi-modal probing of complicated electronic components are crucial in today's electronic manufacturing but is largely inaccessible even with sophisticated techniques. These results show that seemingly simple SEM can be extended to probe complex and useful material properties.