标题： 基于随机几何的RIS辅助蜂窝网络技术经济分析 显示英文标题

标题： A Stochastic Geometry Based Techno-Economic Analysis of RIS-Assisted Cellular Networks

摘要： 可重构智能表面（RISs）是一种有前景的技术，可用于增强蜂窝网络性能，并为网络运营商带来额外价值。 本文提出了一种对RIS辅助的蜂窝网络进行技术经济分析的方法，以帮助运营商决定是部署更多的RISs还是基站（BS）。 我们假设一个相对成本模型，该模型考虑了部署额外节点（无论是BS还是RIS）的总拥有成本（TCO）。 我们假设投资回报率（RoI）与系统的频谱效率成正比。 后者基于一种随机几何模型进行评估，该模型给出了配备RIS的蜂窝网络中遍历速率的积分公式。 任何投资策略的边际RoI由该积分表达式相对于节点密度的偏导数确定。 我们研究了两个案例研究：吞吐量增强和覆盖空洞缓解。 这些例子展示了运营商如何在由当前BS和RIS密度及其相对成本定义的场景中确定最优投资策略。 数值结果说明了根据所提出的投资策略演变的遍历速率，展示了在考虑技术和经济因素的情况下投资决策过程。 这项工作定量地证明了战略性地投资于RISs可以比仅投资于BS密集化提供更好的系统级效益。 显示英文摘要

摘要： Reconfigurable intelligent surfaces (RISs) are a promising technology for enhancing cellular network performance and yielding additional value to network operators. This paper proposes a techno-economic analysis of RIS-assisted cellular networks to guide operators in deciding between deploying additional RISs or base stations (BS). We assume a relative cost model that considers the total cost of ownership (TCO) of deploying additional nodes, either BSs or RISs. We assume a return on investment (RoI) that is proportional to the system's spectral efficiency. The latter is evaluated based on a stochastic geometry model that gives an integral formula for the ergodic rate in cellular networks equipped with RISs. The marginal RoI for any investment strategy is determined by the partial derivative of this integral expression with respect to node densities. We investigate two case studies: throughput enhancement and coverage hole mitigation. These examples demonstrate how operators could determine the optimal investment strategy in scenarios defined by the current densities of BSs and RISs, and their relative costs. Numerical results illustrate the evolution of ergodic rates based on the proposed investment strategy, demonstrating the investment decision-making process while considering technological and economic factors. This work quantitatively demonstrates that strategically investing in RISs can offer better system-level benefits than solely investing in BS densification.