标题： SEMIDV：具有量子效应的紧凑型半导体器件模拟器 显示英文标题

标题： SEMIDV: A Compact Semiconductor Device Simulator with Quantum Effects

摘要： 本文中，我提出了SEMIDV——一种结合量子效应的紧凑型半导体器件仿真器。 SEMIDV求解半导体器件的泊松-漂移-扩散方程，并为脚本编写和数据分析提供了用户友好的Python接口。 局域景观理论被引入以提供对漂移-扩散方程的量子修正。 该理论直接求解薛定谔方程的基态，无需进一步近似，为量子效应建模提供了高效的解决方案。 此外，开发了一种考虑弹道输运的紧凑迁移率模型，以捕捉迁移率的弹道长度依赖性和短沟道器件中的速度过冲效应。 最后，使用SEMIDV对纳米片FET进行了研究。 我分析了具有6 nm栅长的最先进的GAA/ RibbonFET的电特性，并讨论了速度过冲和量子限制对电流和电容的影响。 提出了一种栅长缩短至4.5 nm、Vdd = 0.45 V的超短沟道晶体管设计，以进一步推动集成电路技术的边界。 显示英文摘要

摘要： In this paper, I present SEMIDV - a compact semiconductor device simulator incorporating quantum effects. SEMIDV solves the Poisson-Drift-Diffusion equations for semiconductor devices and provides a user-friendly Python interface for scripting and data analysis. Localization landscape theory is introduced to provide quantum corrections to the Drift-Diffusion equation. This theory directly solves the ground state of the Schrodinger equation without further approximation, offering an efficient solution for quantum effect modeling. Additionally, a compact mobility model considering ballistic transport is developed to capture the ballistic length dependence of mobility and the velocity overshoot effect in short-channel devices. Finally, a study on a nanosheet FET using SEMIDV is conducted. I analyze the electrical characteristics of a state-of-the-art GAA/RibbonFET with a 6 nm gate length and discuss the effects of velocity overshoot and quantum confinement on currents and capacitances. A design for an ultra-short-channel transistor with a gate length down to 4.5 nm with a Vdd = 0.45 V is proposed to push the boundaries of integrated circuit technology further.