标题： 分子束外延生长的氮化钛的电子输运性质 显示英文标题

标题： Electronic transport properties of titanium nitride grown by molecular beam epitaxy

摘要： 本研究探讨了钛氮化物（TiN）薄膜的分子束外延（MBE）生长，实现了高达 15.8 的残余电阻比（RRR）。我们观察到生长温度与晶体质量之间存在很强的相关性，这反映在 RRR 值和晶格参数变化上。超导特性的表征得到了一个 60.4 $\pm$ 0.6 纳米的金兹堡-朗道相干长度，显著高于典型的溅射膜，表明其超导相干性有所提高。第一性原理计算结合实验数据，为 TiN 薄膜的电子结构和输运特性提供了详细见解。温度相关的霍尔系数测量进一步揭示了各向异性散射机制的影响。这些发现为开发用于先进量子计算技术的氮化物基超导材料开辟了一条有前景的道路。 显示英文摘要

摘要： This study investigates the molecular beam epitaxial (MBE) growth of titanium nitride (TiN) thin films, achieving a high residual resistivity ratio (RRR) of 15.8. We observed a strong correlation between growth temperature and crystalline quality, as reflected in both RRR values and lattice parameter variations. Characterization of superconductivity yielded a Ginzburg-Landau coherence length of 60.4 $\pm$ 0.6 nm, significantly higher than typical sputtered films, suggesting improved superconducting coherence. First-principles calculations, in conjunction with experimental data, provided detailed insights into the electronic structure and transport properties of the TiN films. Temperature-dependent Hall coefficient measurements further revealed the influence of anisotropic scattering mechanisms. These findings establish a promising route for the development of nitride-based superconducting materials for advanced quantum computing technologies.